![]() ![]() ![]() Si and ceria are hydroxylated, forming Si–OH and Ce–OH, then dehydration and condensation occur, generating Si–O–Ce. X-ray photoelectron spectroscopy and infrared Fourier transformation reveal that during CMP, a redox reaction firstly took place between Ce 3+ and Ce 4+. ![]() Transmission electron microscopy shows that the thickness of the damaged layer after CMP is 2.8 nm. To the best of our knowledge, it is the lowest surface roughness in such a large area. After CMP, the surface roughness Sa was 0.067 nm with a measurement area of 50 × 50 μm 2, and a sub-angstrom surface is achieved. In this study, a novel environmentally friendly CMP was developed, in which a slurry is composed of ceria, hydrogen peroxide, sodium pyrophosphate, sodium carboxymethyl cellulose, sodium carbonate, and deionized water. Chemical mechanical polishing (CMP) is widely used in the manufacturing of Si, while toxic and polluted slurries are usually employed in CMP, resulting in pollution to the environment. However, it is a challenge to achieve a sub-angstrom surface of Si. Silicon (Si) dominates the integrated circuit (IC), semiconductor, and microelectronic industries. ![]()
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